Properties, synthesis, and device applications of 2D layered InSe
Van der Waals layered indium selenide (InSe) is an emerging star of the 2D semiconducting materials because of its excellent fundamental properties, such as ultrahigh carrier mobility, layer-tunable bandgap, large elastic deformability, and rich polytypes. In addition, 2D layered indium selenide has...
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sg-ntu-dr.10356-1636212022-12-13T01:04:19Z Properties, synthesis, and device applications of 2D layered InSe Dai, Mingjin Gao, Caifang Nie, Qianfan Wang, Qi Jie Lin, Yen-Fu Chu, Junhao Li, Wenwu School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Electronic And Optoelectronics Inse Van der Waals layered indium selenide (InSe) is an emerging star of the 2D semiconducting materials because of its excellent fundamental properties, such as ultrahigh carrier mobility, layer-tunable bandgap, large elastic deformability, and rich polytypes. In addition, 2D layered indium selenide has demonstrated outstanding device performance including photodetector, field-effect transistor, memory and synapse, mechanical and gas sensor, which has offered a new chance to next-generation electrical and optoelectronic devices. This review presents a comprehensive summary of recent progress in 2D layered indium selenide. The novel fundamental properties and synthetic methods are summarized. Also, the indium selenide-based state-of-the-art electronic/optoelectronic devices, such as a functional field-effect transistor, photodetector, and mechanical and gas sensors are systematically summarized. The techniques to enhance the performances of devices are also discussed. Finally, a brief discussion on the challenges and future opportunities as a guideline for this field is provided. This work was financially supported by the Natural Science Foundation of Shanghai (Grant No. 19ZR1473400), the NSAF Foundation of China (Grant No. U1830130), and the young scientist project of MOE innovation platform (Fudan University). 2022-12-13T01:04:19Z 2022-12-13T01:04:19Z 2022 Journal Article Dai, M., Gao, C., Nie, Q., Wang, Q. J., Lin, Y., Chu, J. & Li, W. (2022). Properties, synthesis, and device applications of 2D layered InSe. Advanced Materials Technologies, 2200321-. https://dx.doi.org/10.1002/admt.202200321 2365-709X https://hdl.handle.net/10356/163621 10.1002/admt.202200321 2-s2.0-85133014662 2200321 en Advanced Materials Technologies © 2022 Wiley-VCH GmbH. All rights reserved. |
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Engineering::Electrical and electronic engineering Electronic And Optoelectronics Inse Dai, Mingjin Gao, Caifang Nie, Qianfan Wang, Qi Jie Lin, Yen-Fu Chu, Junhao Li, Wenwu Properties, synthesis, and device applications of 2D layered InSe |
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Van der Waals layered indium selenide (InSe) is an emerging star of the 2D semiconducting materials because of its excellent fundamental properties, such as ultrahigh carrier mobility, layer-tunable bandgap, large elastic deformability, and rich polytypes. In addition, 2D layered indium selenide has demonstrated outstanding device performance including photodetector, field-effect transistor, memory and synapse, mechanical and gas sensor, which has offered a new chance to next-generation electrical and optoelectronic devices. This review presents a comprehensive summary of recent progress in 2D layered indium selenide. The novel fundamental properties and synthetic methods are summarized. Also, the indium selenide-based state-of-the-art electronic/optoelectronic devices, such as a functional field-effect transistor, photodetector, and mechanical and gas sensors are systematically summarized. The techniques to enhance the performances of devices are also discussed. Finally, a brief discussion on the challenges and future opportunities as a guideline for this field is provided. |
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School of Electrical and Electronic Engineering |
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School of Electrical and Electronic Engineering Dai, Mingjin Gao, Caifang Nie, Qianfan Wang, Qi Jie Lin, Yen-Fu Chu, Junhao Li, Wenwu |
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Article |
author |
Dai, Mingjin Gao, Caifang Nie, Qianfan Wang, Qi Jie Lin, Yen-Fu Chu, Junhao Li, Wenwu |
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Dai, Mingjin |
title |
Properties, synthesis, and device applications of 2D layered InSe |
title_short |
Properties, synthesis, and device applications of 2D layered InSe |
title_full |
Properties, synthesis, and device applications of 2D layered InSe |
title_fullStr |
Properties, synthesis, and device applications of 2D layered InSe |
title_full_unstemmed |
Properties, synthesis, and device applications of 2D layered InSe |
title_sort |
properties, synthesis, and device applications of 2d layered inse |
publishDate |
2022 |
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https://hdl.handle.net/10356/163621 |
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1753801157697863680 |