Properties, synthesis, and device applications of 2D layered InSe

Van der Waals layered indium selenide (InSe) is an emerging star of the 2D semiconducting materials because of its excellent fundamental properties, such as ultrahigh carrier mobility, layer-tunable bandgap, large elastic deformability, and rich polytypes. In addition, 2D layered indium selenide has...

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Main Authors: Dai, Mingjin, Gao, Caifang, Nie, Qianfan, Wang, Qi Jie, Lin, Yen-Fu, Chu, Junhao, Li, Wenwu
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2022
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Online Access:https://hdl.handle.net/10356/163621
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1636212022-12-13T01:04:19Z Properties, synthesis, and device applications of 2D layered InSe Dai, Mingjin Gao, Caifang Nie, Qianfan Wang, Qi Jie Lin, Yen-Fu Chu, Junhao Li, Wenwu School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Electronic And Optoelectronics Inse Van der Waals layered indium selenide (InSe) is an emerging star of the 2D semiconducting materials because of its excellent fundamental properties, such as ultrahigh carrier mobility, layer-tunable bandgap, large elastic deformability, and rich polytypes. In addition, 2D layered indium selenide has demonstrated outstanding device performance including photodetector, field-effect transistor, memory and synapse, mechanical and gas sensor, which has offered a new chance to next-generation electrical and optoelectronic devices. This review presents a comprehensive summary of recent progress in 2D layered indium selenide. The novel fundamental properties and synthetic methods are summarized. Also, the indium selenide-based state-of-the-art electronic/optoelectronic devices, such as a functional field-effect transistor, photodetector, and mechanical and gas sensors are systematically summarized. The techniques to enhance the performances of devices are also discussed. Finally, a brief discussion on the challenges and future opportunities as a guideline for this field is provided. This work was financially supported by the Natural Science Foundation of Shanghai (Grant No. 19ZR1473400), the NSAF Foundation of China (Grant No. U1830130), and the young scientist project of MOE innovation platform (Fudan University). 2022-12-13T01:04:19Z 2022-12-13T01:04:19Z 2022 Journal Article Dai, M., Gao, C., Nie, Q., Wang, Q. J., Lin, Y., Chu, J. & Li, W. (2022). Properties, synthesis, and device applications of 2D layered InSe. Advanced Materials Technologies, 2200321-. https://dx.doi.org/10.1002/admt.202200321 2365-709X https://hdl.handle.net/10356/163621 10.1002/admt.202200321 2-s2.0-85133014662 2200321 en Advanced Materials Technologies © 2022 Wiley-VCH GmbH. All rights reserved.
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering
Electronic And Optoelectronics
Inse
spellingShingle Engineering::Electrical and electronic engineering
Electronic And Optoelectronics
Inse
Dai, Mingjin
Gao, Caifang
Nie, Qianfan
Wang, Qi Jie
Lin, Yen-Fu
Chu, Junhao
Li, Wenwu
Properties, synthesis, and device applications of 2D layered InSe
description Van der Waals layered indium selenide (InSe) is an emerging star of the 2D semiconducting materials because of its excellent fundamental properties, such as ultrahigh carrier mobility, layer-tunable bandgap, large elastic deformability, and rich polytypes. In addition, 2D layered indium selenide has demonstrated outstanding device performance including photodetector, field-effect transistor, memory and synapse, mechanical and gas sensor, which has offered a new chance to next-generation electrical and optoelectronic devices. This review presents a comprehensive summary of recent progress in 2D layered indium selenide. The novel fundamental properties and synthetic methods are summarized. Also, the indium selenide-based state-of-the-art electronic/optoelectronic devices, such as a functional field-effect transistor, photodetector, and mechanical and gas sensors are systematically summarized. The techniques to enhance the performances of devices are also discussed. Finally, a brief discussion on the challenges and future opportunities as a guideline for this field is provided.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Dai, Mingjin
Gao, Caifang
Nie, Qianfan
Wang, Qi Jie
Lin, Yen-Fu
Chu, Junhao
Li, Wenwu
format Article
author Dai, Mingjin
Gao, Caifang
Nie, Qianfan
Wang, Qi Jie
Lin, Yen-Fu
Chu, Junhao
Li, Wenwu
author_sort Dai, Mingjin
title Properties, synthesis, and device applications of 2D layered InSe
title_short Properties, synthesis, and device applications of 2D layered InSe
title_full Properties, synthesis, and device applications of 2D layered InSe
title_fullStr Properties, synthesis, and device applications of 2D layered InSe
title_full_unstemmed Properties, synthesis, and device applications of 2D layered InSe
title_sort properties, synthesis, and device applications of 2d layered inse
publishDate 2022
url https://hdl.handle.net/10356/163621
_version_ 1753801157697863680