Properties, synthesis, and device applications of 2D layered InSe

• Main Authors: Dai, Mingjin, Gao, Caifang, Nie, Qianfan, Wang, Qi Jie, Lin, Yen-Fu, Chu, Junhao, Li, Wenwu
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2022
• Subjects: Engineering::Electrical and electronic engineering; Electronic And Optoelectronics; Inse
• Online Access: https://hdl.handle.net/10356/163621
• Institution: Nanyang Technological University

Van der Waals layered indium selenide (InSe) is an emerging star of the 2D semiconducting materials because of its excellent fundamental properties, such as ultrahigh carrier mobility, layer-tunable bandgap, large elastic deformability, and rich polytypes. In addition, 2D layered indium selenide has...