Spintronic terahertz emitters in silicon-based heterostructures

• المؤلفون الرئيسيون: Liu, Jiayun, Lee, Kyusup, Yang, Yingshu, Li, Ziqi, Sharma, Raghav, Xi, Lifei, Salim, Teddy, Boothroyd, Chris, Lam, Yeng Ming, Yang, Hyunsoo, Battiato, Marco, Chia, Elbert E. M.
• مؤلفون آخرون: School of Materials Science and Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2023
• الموضوعات: Engineering::Materials; Roadband Terahertz Pulse; Electronics Devices
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/165549

Integration of active elements into silicon wafers is the first step towards their usage in modern electronic devices based on nanometric structures. Spintronic terahertz emitters, typically composed of nanometer-thin magnetic multilayer, have the outstanding capability of producing high-quality, broadband terahertz pulses using extremely simple heterostructures. A question remains on whether an efficient and cheap integration with other silicon-based technologies can be achieved. We show here that simply having a ferromagnetic layer on silicon produces remarkably efficient spintronic terahertz emission despite the low spin-orbit coupling of the individual components. We achieve this by leveraging on the natural formation of silicides at the interface of a transition metal and silicon. The cobalt silicide layer has good spin-to-charge conversion efficiency that reaches around 1/6 as that of the prototypical spintronics THz-emitter heterostructure cobalt/platinum.