Spintronic terahertz emitters in silicon-based heterostructures

• المؤلفون الرئيسيون: Liu, Jiayun, Lee, Kyusup, Yang, Yingshu, Li, Ziqi, Sharma, Raghav, Xi, Lifei, Salim, Teddy, Boothroyd, Chris, Lam, Yeng Ming, Yang, Hyunsoo, Battiato, Marco, Chia, Elbert E. M.
• مؤلفون آخرون: School of Materials Science and Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2023
• الموضوعات: Engineering::Materials; Roadband Terahertz Pulse; Electronics Devices
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/165549
• المؤسسة: Nanyang Technological University

Integration of active elements into silicon wafers is the first step towards their usage in modern electronic devices based on nanometric structures. Spintronic terahertz emitters, typically composed of nanometer-thin magnetic multilayer, have the outstanding capability of producing high-quality, br...