Antireflective GaN nanoridge texturing by metal-assisted chemical etching via a thermally dewetted Pt catalyst network for highly responsive ultraviolet photodiodes

• المؤلفون الرئيسيون: Liao, Yikai, Kim, You Jin, Lai, Junyu, Seo, Jung-Hun, Kim, Munho
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2023
• الموضوعات: Engineering::Electrical and electronic engineering; Antireflection; Gallium Nitride
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/165824
• المؤسسة: Nanyang Technological University

Antireflective (AR) surface texturing is a feasible way to boost the light absorption of photosensitive materials and devices. As a plasma-free etching method, metal-assisted chemical etching (MacEtch) has been employed for fabricating GaN AR surface texturing. However, the poor etching efficiency o...