Design of SRAM-based in-memory-computing for machine learning applications
This paper deals with a design of SRAM based in-memory computing which is especially useful on edge devices. This paper describes the feasibility of in-memory computing using SRAM, the objectives of in-memory computing, the design of 6T and 8T based SRAM and essential components, and performance of...
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Nanyang Technological University
2023
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| Online Access: | https://hdl.handle.net/10356/167096 |
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sg-ntu-dr.10356-1670962023-07-07T17:35:12Z Design of SRAM-based in-memory-computing for machine learning applications Ren, Mark Kim Tae Hyoung School of Electrical and Electronic Engineering THKIM@ntu.edu.sg Engineering::Electrical and electronic engineering This paper deals with a design of SRAM based in-memory computing which is especially useful on edge devices. This paper describes the feasibility of in-memory computing using SRAM, the objectives of in-memory computing, the design of 6T and 8T based SRAM and essential components, and performance of the deliverables. This project makes use of 65nm TSMC technology and Cadence Virtuoso. Bachelor of Engineering (Electrical and Electronic Engineering) 2023-05-23T00:43:25Z 2023-05-23T00:43:25Z 2023 Final Year Project (FYP) Ren, M. (2023). Design of SRAM-based in-memory-computing for machine learning applications. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/167096 https://hdl.handle.net/10356/167096 en application/pdf Nanyang Technological University |
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Singapore Singapore |
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English |
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Engineering::Electrical and electronic engineering Ren, Mark Design of SRAM-based in-memory-computing for machine learning applications |
| description |
This paper deals with a design of SRAM based in-memory computing which is especially useful on edge devices. This paper describes the feasibility of in-memory computing using SRAM, the objectives of in-memory computing, the design of 6T and 8T based SRAM and essential components, and performance of the deliverables. This project makes use of 65nm TSMC technology and Cadence Virtuoso. |
| author2 |
Kim Tae Hyoung |
| author_facet |
Kim Tae Hyoung Ren, Mark |
| format |
Final Year Project |
| author |
Ren, Mark |
| author_sort |
Ren, Mark |
| title |
Design of SRAM-based in-memory-computing for machine learning applications |
| title_short |
Design of SRAM-based in-memory-computing for machine learning applications |
| title_full |
Design of SRAM-based in-memory-computing for machine learning applications |
| title_fullStr |
Design of SRAM-based in-memory-computing for machine learning applications |
| title_full_unstemmed |
Design of SRAM-based in-memory-computing for machine learning applications |
| title_sort |
design of sram-based in-memory-computing for machine learning applications |
| publisher |
Nanyang Technological University |
| publishDate |
2023 |
| url |
https://hdl.handle.net/10356/167096 |
| _version_ |
1772825728083034112 |