Design of SRAM-based in-memory-computing for machine learning applications

• Main Author: Ren, Mark
• Other Authors: Kim Tae Hyoung
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2023
• Subjects: Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/167096
• Institution: Nanyang Technological University

This paper deals with a design of SRAM based in-memory computing which is especially useful on edge devices. This paper describes the feasibility of in-memory computing using SRAM, the objectives of in-memory computing, the design of 6T and 8T based SRAM and essential components, and performance of...