Ultra-low voltage SRAM design

• المؤلف الرئيسي: Zhou, Jay Yun Jie
• مؤلفون آخرون: Kim Tae Hyoung
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2017
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/70808

Static Random Access Memory or SRAM, is the most common embedded memory option for Integrated Circuits. With the scaling of supply voltage to close to sub threshold regions, it must still remain operable such that they can still work in ultra-low power battery operated systems. However, the basic...