Maximization of SRAM energy efficiency utilizing MTCMOS technology
Higher-Vth devices in the cross-coupled latches and the write access transistors, and lower-Vth devices in the read ports are preferred for reducing leakage current without sacrificing performance. However, at ultra-low supply voltage levels, higher-Vth devices can retard or nullify energy efficienc...
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Main Authors: | , , |
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Format: | Conference or Workshop Item |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/99114 http://hdl.handle.net/10220/12584 |
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Institution: | Nanyang Technological University |
Language: | English |