Design of low voltage, 16kb 9T SRAM with hierarchical bitline and writeback block

• المؤلف الرئيسي: Li, Ricky Qi.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/53461

Subthreshold circuits are increasingly popular especially in ultra-low power applications like wireless sensor, cell phone, and biomedical where minimal power consumption is a primary design constraint. Static Random Access Memory (SRAM) with wider supply voltage range is essential for achieving bet...