Design of low voltage, 16kb 9T SRAM with hierarchical bitline and writeback block

• 主要作者: Li, Ricky Qi.
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Theses and Dissertations
• 語言: English
• 出版: 2013
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: http://hdl.handle.net/10356/53461

Subthreshold circuits are increasingly popular especially in ultra-low power applications like wireless sensor, cell phone, and biomedical where minimal power consumption is a primary design constraint. Static Random Access Memory (SRAM) with wider supply voltage range is essential for achieving bet...