Flexible gallium nitride devices for various applications in internet of things
Several studies describing the formation and characterization of GaN films for flexible optoelectronic devices have been published. However, the fabrication method and process are not yet illustrated. We describe the steps required to fabricate an MSM PD from a bare substrate, as well as the v...
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| Format: | Final Year Project |
| Language: | English |
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Nanyang Technological University
2023
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| Online Access: | https://hdl.handle.net/10356/167211 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Several studies describing the formation and characterization of GaN films for flexible
optoelectronic devices have been published. However, the fabrication method and process
are not yet illustrated. We describe the steps required to fabricate an MSM PD from a bare
substrate, as well as the various strain tests performed on the PET substrate and the changes
in the MSM PD when it is illuminated by incident light. This report seeks to determine
whether GaN can be utilized as a notable semiconductor material. |
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