Thin gate oxide based carbon nanotube field effect transistors

• Main Author: Soh, Candy Shia Leng.
• Other Authors: Zhang Qing
• Format: Final Year Project
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: http://hdl.handle.net/10356/16739
• Institution: Nanyang Technological University

This report focuses on the fabrication of Carbon Nanotubes Field Effect Transistors (CNTFETs), aligning CNTs between electrodes and electrical breakdown. Literature reviews have been given to start out the understanding of new CNTs technology, in aiding the progress of this project. As the project proceeded along the way, more papers are being read through in order to find if any newest or latest technology can be found in the aid of the project. Before fabricating the devices for the experiments, processes and equipment are being taught and learnt to get the knowledge in order to use them usefully and handy. The fabrication of the device is the most important in this report. The equipment and the processes used to fabrication the device will be discussed in detailed. The carbon nanotube FETs may have better controllability on carbon nanotube channel due to small thickness of gate oxide and the threshold voltage of the CNTFETs may be varied with the work function of gate electrodes. Measurements and graphs are shown in the results and discussions.