Ferroelectric-gate carbon nanotube field effect transistor for non-volatile memory application
Carbon nanotube field effect transistor has attracted much attention and is a promising candidate for next generation nanoelectronics. Significant hysteresis usually exists in its transfer characteristics between the forward and reverse gate bias sweeps, which is problematic for application in logi...
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Format: | Theses and Dissertations |
Language: | English |
Published: |
2014
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Online Access: | http://hdl.handle.net/10356/55609 |
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Institution: | Nanyang Technological University |
Language: | English |