Ferroelectric-gate carbon nanotube field effect transistor for non-volatile memory application

Carbon nanotube field effect transistor has attracted much attention and is a promising candidate for next generation nanoelectronics. Significant hysteresis usually exists in its transfer characteristics between the forward and reverse gate bias sweeps, which is problematic for application in logi...

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Bibliographic Details
Main Author: Cheah, Jason Jun Wei
Other Authors: Wang Junling
Format: Theses and Dissertations
Language:English
Published: 2014
Subjects:
Online Access:http://hdl.handle.net/10356/55609
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Institution: Nanyang Technological University
Language: English
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