Wide-band gap device based battery charger

• المؤلف الرئيسي: Muhammad Sharizad bin Safiee
• مؤلفون آخرون: Amer M. Y. M. Ghias
• التنسيق: Final Year Project
• اللغة: English
• منشور في: Nanyang Technological University 2023
• الموضوعات: Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/167615
• المؤسسة: Nanyang Technological University

Wide-Band Gap devices, such as Silicon Carbide (SiC) and Gallium Nitride (GaN), have emerged as promising alternatives to traditional power semiconductors for high-performance and energy-efficient power conversion applications. This study focuses on the use of WBG devices in battery chargers, whi...