Enhancement of temperature-modulated NbO₂-based relaxation oscillator via interfacial and bulk treatments

• المؤلفون الرئيسيون: Ang, Jia Min, Dananjaya, Putu Andhita, Chow, Samuel Chen Wai, Lim, Gerard Joseph, Seet, Chim Seng, Lew, Wen Siang
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2023
• الموضوعات: Science::Physics; Argon; Metal Insulator Transition
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/170166
• المؤسسة: Nanyang Technological University

This work demonstrates oscillation frequency modulation in a NbO2-based relaxation oscillator device, in which the oscillation frequency increases with operating temperature and source voltage, and decreases with load resistance. An annealing-induced oxygen diffusion at 373 K was carried out to opti...