Oxygen Vacancy Induced Room-Temperature Metal–Insulator Transition in Nickelate Films and Its Potential Application in Photovoltaics

• المؤلفون الرئيسيون: Wang, Le, Dash, Sibashisa, Chang, Lei, You, Lu, Feng, Yaqing, He, Xu, Jin, Kui-juan, Zhou, Yang, Ong, Hock Guan, Ren, Peng, Wang, Shiwei, Chen, Lang, Wang, Junling
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2017
• الموضوعات: Metal−insulator transition; Heterojunction
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/82833; http://hdl.handle.net/10220/42319
• المؤسسة: Nanyang Technological University

Oxygen vacancy is intrinsically coupled with magnetic, electronic, and transport properties of transition-metal oxide materials and directly determines their multifunctionality. Here, we demonstrate reversible control of oxygen content by postannealing at temperature lower than 300 °C and realize th...