Fermi level depinning via insertion of a graphene buffer layer at the gold-2D tin monoxide contact
Two-dimensional (2D) tin monoxide (SnO) has attracted much attention owing to its distinctive electronic and optical properties, which render itself suitable as a channel material in field effect transistors (FETs). However, upon contact with metals for such applications, the Fermi level pinning eff...
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格式: | Article |
語言: | English |
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2023
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在線閱讀: | https://hdl.handle.net/10356/171331 |
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