Electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals heterostructure for in-sensor reservoir computing at the optical communication band
Although 2D materials are widely explored for data storage and neuromorphic computing, the construction of 2D material-based memory devices with optoelectronic responsivity in the short-wave infrared (SWIR) region for in-sensor reservoir computing (RC) at the optical communication band still remains...
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Main Authors: | Zha, Jiajia, Shi, Shuhui, Chaturvedi, Apoorva, Huang, Haoxin, Yang, Peng, Yao, Yao, Li, Siyuan, Xia, Yunpeng, Zhang, Zhuomin, Wang, Wei, Wang, Huide, Wang, Shaocong, Yuan, Zhen, Yang, Zhengbao, He, Qiyuan, Tai, Huiling, Teo, Edwin Hang Tong, Yu, Hongyu, Ho, Johnny C., Wang, Zhongrui, Zhang, Hua, Tan, Chaoliang |
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Other Authors: | School of Materials Science and Engineering |
Format: | Article |
Language: | English |
Published: |
2024
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/172939 |
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Institution: | Nanyang Technological University |
Language: | English |
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