Enhanced resistive switching characteristics of conductive bridging memory device by a Co-Cu alloy electrode

• Main Authors: Lee, Calvin Xiu Xian, Dananjaya, Putu Andhita, Chee, Mun Yin, Poh, Han Yin, Tan, Funan, Thong, Jia Rui, Liu, Lingli, Lim, Gerard Joseph, Du, Yuanmin, Tan, Juan Boon, Lew, Wen Siang
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2024
• Subjects: Science::Physics; Cobalt Alloys; Platinum Alloys
• Online Access: https://hdl.handle.net/10356/173038
• Institution: Nanyang Technological University

One of the main challenges in the development of conductive bridging random access memory (CBRAM) is the large stochastic nature of ion movement that ultimately leads to large parameter variability. In this study, the resistive switching variability of CBRAM devices is significantly improved by empl...