Doubling of the superconducting transition temperature in ultra-clean wafer-scale aluminum nanofilms
We studied the role of reduced dimensionality and disorder in the superconducting properties of wafer-scale aluminum (Al) nanofilms. This new generation of ultrathin films were grown using molecular beam epitaxy and depict normal-state sheet resistance at least 20 times lower than the quantum resist...
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| Main Authors: | , , , , , , , , , , , , , , , |
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| 其他作者: | |
| 格式: | Article |
| 語言: | English |
| 出版: |
2024
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/173904 |
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| 總結: | We studied the role of reduced dimensionality and disorder in the superconducting properties of wafer-scale aluminum (Al) nanofilms. This new generation of ultrathin films were grown using molecular beam epitaxy and depict normal-state sheet resistance at least 20 times lower than the quantum resistance h/(4e2). Defying general expectations, the superconducting transition temperature of our films increases with decreasing Al film thickness, reaching 2.4 K for a 3.5-nm-thick Al film grown on GaAs: twice that of bulk Al (1.2 K). Surface phonon softening is shown to impact superconductivity in pure ultrathin films, offering a route for materials engineering in two dimensions. |
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