Room-temperature tunable tunneling magnetoresistance in Fe3GaTe2/WSe2/Fe3GaTe2 van der Waals heterostructures

• Main Authors: Pan, Haiyang, Singh, Anil Kumar, Zhang, Chusheng, Hu, Xueqi, Shi, Jiayu, An, Liheng, Wang, Naizhou, Duan, Ruihuan, Liu, Zheng, Parkin, Stuart S. P., Deb, Pritam, Gao, Weibo
• Other Authors: School of Physical and Mathematical Sciences
• Format: Article
• Language: English
• Published: 2024
• Subjects: Engineering; Magnetic tunnel junction; Tunneling magnetoresistance
• Online Access: https://hdl.handle.net/10356/174889
• Institution: Nanyang Technological University

The exceptional properties of two-dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean interfaces. The exploration of vdW MTJ devices with high work...