Room-temperature tunable tunneling magnetoresistance in Fe3GaTe2/WSe2/Fe3GaTe2 van der Waals heterostructures

The exceptional properties of two-dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean interfaces. The exploration of vdW MTJ devices with high work...

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Bibliographic Details
Main Authors: Pan, Haiyang, Singh, Anil Kumar, Zhang, Chusheng, Hu, Xueqi, Shi, Jiayu, An, Liheng, Wang, Naizhou, Duan, Ruihuan, Liu, Zheng, Parkin, Stuart S. P., Deb, Pritam, Gao, Weibo
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2024
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Online Access:https://hdl.handle.net/10356/174889
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Institution: Nanyang Technological University
Language: English

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