Photoluminescence and photoluminescence excitation study of semiconductor materials

• Main Author: Ngian, Jin Shun.
• Other Authors: Fan Weijun
• Format: Final Year Project
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
• Online Access: http://hdl.handle.net/10356/17583
• Institution: Nanyang Technological University

Semiconductor materials are very important in modern optoelectronics and microelectronics applications. These applications demand a better understanding of the fundamental properties of semiconductors and the optimization of growth and post-growth process. Consequently a variety of characterization techniques which are sensitive to various physical properties are needed. Photoluminescence (PL) and photoluminescence excitation (PLE) is one of those techniques. Through the study of PL and PLE spectra, the quality of material, and important material parameters, such as, the band gap for bulk material and the effective band gap for semiconductor quantum well can be extracted. In this final year project, the author will be able to learn the working principle of PL and PLE, gain hands-on experience on how to operate the PL and PLE system, measure and analyze the PL and PLE spectra of GaAs and GaInNAs semiconductor quantum wells.