Scandium and Boron co-alloyed AlN thin films with improved piezoelectric and ferroelectric properties

• المؤلف الرئيسي: Wu, Cheng Lung
• مؤلفون آخرون: Nripan Mathews
• التنسيق: Final Year Project
• اللغة: English
• منشور في: Nanyang Technological University 2024
• الموضوعات: Engineering; Piezoelectricity; Ferroelectricity; Aluminium scandium nitride; MEMS device; Thin film deposition; PVD reactive sputtering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/175965

This study explores the optimization of piezoelectric and ferroelectric properties of doped aluminum nitride (AlN) films, specifically investigating the effects of scandium (Sc) and boron (B) doping. The experimental setup involves depositing a Metal-Ferroelectric-Metal (MFM) thin film stack on 200m...