Exploring sulphur substitution in CuCrO2 as p-type transparent conducting materials for optoelectronics applications
Realizing fully transparent electronic devices necessitates the advancement of high- performance p-type transparent conducting oxides. However, attaining this goal poses challenges rooted in the inherent limitations of metal oxides. Their poor p-type conductivity arises from the strong localizati...
Saved in:
Main Author: | |
---|---|
Other Authors: | |
Format: | Final Year Project |
Language: | English |
Published: |
Nanyang Technological University
2024
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/176050 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Summary: | Realizing fully transparent electronic devices necessitates the advancement of high-
performance p-type transparent conducting oxides. However, attaining this goal poses
challenges rooted in the inherent limitations of metal oxides. Their poor p-type
conductivity arises from the strong localization of oxygen, giving rise to a significant
hole effective mass and, consequently, a reduction in mobility. With its distinctive
layered crystal structure, the copper chromium delafossite (CuCrO2) emerges as a
promising solution to tackle this challenge, providing a combination of hole mobility
and optical transparency. However, it’s performance are still subpar to the n-type
counterpart. This project delves into improving CuCrO2 thin films by incorporating
sulphur substitution to enhance conductivity. The first strategy is by annealing the
CuCrO2 thin film in a sulphur atmosphere led to the formation of conductive CuS,
significantly elevating conductivity, resulting in a sheet resistance value of 0.339 KΩ,
an optical transparency of 39.3% in the visible spectrum, and a bandgap of 2.97 eV.
The second strategy through thiourea addition yielded non-conductive films with
bandgaps ranging from 3.14 to 3.19 eV. However, further optimization studies are
conducted by varying the annealing temperature at 400°C, 500°C, and 600°C, which
shows decrease in conductivity as the temperature increased. Optimal performance
was observed at 400°C, exhibiting a sheet resistance of 7.86 MΩ, an optical
transparency of 85.4% in the visible spectrum, bandgap of 3.97 eV, yielding FOMH
and FOMG values of 2.61 x 10-2 (1/MΩ) and 0.8 (1/MΩ), respectively. This study has
shown the effect of sulphur substitution on CuCrO2 thin film through sulphur
annealing and thiourea addition. |
---|