Exploring sulphur substitution in CuCrO2 as p-type transparent conducting materials for optoelectronics applications
Realizing fully transparent electronic devices necessitates the advancement of high- performance p-type transparent conducting oxides. However, attaining this goal poses challenges rooted in the inherent limitations of metal oxides. Their poor p-type conductivity arises from the strong localizati...
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sg-ntu-dr.10356-1760502024-05-18T16:45:54Z Exploring sulphur substitution in CuCrO2 as p-type transparent conducting materials for optoelectronics applications Fan, Yang Lydia Helena Wong School of Materials Science and Engineering LydiaWong@ntu.edu.sg Engineering Realizing fully transparent electronic devices necessitates the advancement of high- performance p-type transparent conducting oxides. However, attaining this goal poses challenges rooted in the inherent limitations of metal oxides. Their poor p-type conductivity arises from the strong localization of oxygen, giving rise to a significant hole effective mass and, consequently, a reduction in mobility. With its distinctive layered crystal structure, the copper chromium delafossite (CuCrO2) emerges as a promising solution to tackle this challenge, providing a combination of hole mobility and optical transparency. However, it’s performance are still subpar to the n-type counterpart. This project delves into improving CuCrO2 thin films by incorporating sulphur substitution to enhance conductivity. The first strategy is by annealing the CuCrO2 thin film in a sulphur atmosphere led to the formation of conductive CuS, significantly elevating conductivity, resulting in a sheet resistance value of 0.339 KΩ, an optical transparency of 39.3% in the visible spectrum, and a bandgap of 2.97 eV. The second strategy through thiourea addition yielded non-conductive films with bandgaps ranging from 3.14 to 3.19 eV. However, further optimization studies are conducted by varying the annealing temperature at 400°C, 500°C, and 600°C, which shows decrease in conductivity as the temperature increased. Optimal performance was observed at 400°C, exhibiting a sheet resistance of 7.86 MΩ, an optical transparency of 85.4% in the visible spectrum, bandgap of 3.97 eV, yielding FOMH and FOMG values of 2.61 x 10-2 (1/MΩ) and 0.8 (1/MΩ), respectively. This study has shown the effect of sulphur substitution on CuCrO2 thin film through sulphur annealing and thiourea addition. Bachelor's degree 2024-05-13T07:40:24Z 2024-05-13T07:40:24Z 2024 Final Year Project (FYP) Fan, Y. (2024). Exploring sulphur substitution in CuCrO2 as p-type transparent conducting materials for optoelectronics applications. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/176050 https://hdl.handle.net/10356/176050 en application/pdf Nanyang Technological University |
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Engineering Fan, Yang Exploring sulphur substitution in CuCrO2 as p-type transparent conducting materials for optoelectronics applications |
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Realizing fully transparent electronic devices necessitates the advancement of high-
performance p-type transparent conducting oxides. However, attaining this goal poses
challenges rooted in the inherent limitations of metal oxides. Their poor p-type
conductivity arises from the strong localization of oxygen, giving rise to a significant
hole effective mass and, consequently, a reduction in mobility. With its distinctive
layered crystal structure, the copper chromium delafossite (CuCrO2) emerges as a
promising solution to tackle this challenge, providing a combination of hole mobility
and optical transparency. However, it’s performance are still subpar to the n-type
counterpart. This project delves into improving CuCrO2 thin films by incorporating
sulphur substitution to enhance conductivity. The first strategy is by annealing the
CuCrO2 thin film in a sulphur atmosphere led to the formation of conductive CuS,
significantly elevating conductivity, resulting in a sheet resistance value of 0.339 KΩ,
an optical transparency of 39.3% in the visible spectrum, and a bandgap of 2.97 eV.
The second strategy through thiourea addition yielded non-conductive films with
bandgaps ranging from 3.14 to 3.19 eV. However, further optimization studies are
conducted by varying the annealing temperature at 400°C, 500°C, and 600°C, which
shows decrease in conductivity as the temperature increased. Optimal performance
was observed at 400°C, exhibiting a sheet resistance of 7.86 MΩ, an optical
transparency of 85.4% in the visible spectrum, bandgap of 3.97 eV, yielding FOMH
and FOMG values of 2.61 x 10-2 (1/MΩ) and 0.8 (1/MΩ), respectively. This study has
shown the effect of sulphur substitution on CuCrO2 thin film through sulphur
annealing and thiourea addition. |
author2 |
Lydia Helena Wong |
author_facet |
Lydia Helena Wong Fan, Yang |
format |
Final Year Project |
author |
Fan, Yang |
author_sort |
Fan, Yang |
title |
Exploring sulphur substitution in CuCrO2 as p-type transparent conducting materials for optoelectronics applications |
title_short |
Exploring sulphur substitution in CuCrO2 as p-type transparent conducting materials for optoelectronics applications |
title_full |
Exploring sulphur substitution in CuCrO2 as p-type transparent conducting materials for optoelectronics applications |
title_fullStr |
Exploring sulphur substitution in CuCrO2 as p-type transparent conducting materials for optoelectronics applications |
title_full_unstemmed |
Exploring sulphur substitution in CuCrO2 as p-type transparent conducting materials for optoelectronics applications |
title_sort |
exploring sulphur substitution in cucro2 as p-type transparent conducting materials for optoelectronics applications |
publisher |
Nanyang Technological University |
publishDate |
2024 |
url |
https://hdl.handle.net/10356/176050 |
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1806059766824304640 |