Flexible silicon (Si) nanomembranes and devices

• Main Author: Ko, Keng Wee
• Other Authors: Kim Munho
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2024
• Subjects: Engineering
• Online Access: https://hdl.handle.net/10356/176824
• Institution: Nanyang Technological University

This project demonstrates how to fabricate the Silicon nanomembrane device and test its performance under different strain conditions, hence creating applications within the flexible electronics industry. Raman spectroscopy is an effective tool used to determine and characterise the magnitude and type of strain a material experiences, the performance of the device can also be determined through the Raman Spectroscopy. It is observed from the experiment conducted that under a tensile strain of 28.53 radii of curvature, the PET device experiences a 0.295% strain with a Raman peak shift of 0.994 cm-1 to the left and under a compressive strain of 40.28 radii of curvature, the PET device experiences a -0.452% strain with a Raman peak shift of 1.52278 cm-1 to the right. Additionally, under no light condition the photodetector produces a dark saturation current of -5E-10A at -2V and 8E-10A at 2V and under light condition the photodetector produces a saturated photo current at -2.5E-09A at -2V and 3E-09A at 2V.