Quantum engineering of 2D magnetic structure
This report looks to examine two-dimensional (2D) materials and their possible viability as a material in field effect transistors (FETs) over conventional counterparts. In this report, TaCo2Te2 was extracted in thin film flakes and attached to a Hall Device to measure its magnetoresistance and Hall...
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| Format: | Final Year Project |
| Language: | English |
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Nanyang Technological University
2024
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| Online Access: | https://hdl.handle.net/10356/176847 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | This report looks to examine two-dimensional (2D) materials and their possible viability as a material in field effect transistors (FETs) over conventional counterparts. In this report, TaCo2Te2 was extracted in thin film flakes and attached to a Hall Device to measure its magnetoresistance and Hall effect. After fabrication of the TaCo2Te2 Hall Device, the material’s magnetoresistance was found to be suitable. This implies that TaCo2Te2 has potential application in field effect transistors. |
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