Quantum engineering of 2D magnetic structure

This report looks to examine two-dimensional (2D) materials and their possible viability as a material in field effect transistors (FETs) over conventional counterparts. In this report, TaCo2Te2 was extracted in thin film flakes and attached to a Hall Device to measure its magnetoresistance and Hall...

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Main Author: Loo, Gordon San Wei
Other Authors: Song Peng
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2024
Subjects:
Online Access:https://hdl.handle.net/10356/176847
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1768472024-05-24T15:43:37Z Quantum engineering of 2D magnetic structure Loo, Gordon San Wei Song Peng School of Electrical and Electronic Engineering peng.song@ntu.edu.sg Engineering This report looks to examine two-dimensional (2D) materials and their possible viability as a material in field effect transistors (FETs) over conventional counterparts. In this report, TaCo2Te2 was extracted in thin film flakes and attached to a Hall Device to measure its magnetoresistance and Hall effect. After fabrication of the TaCo2Te2 Hall Device, the material’s magnetoresistance was found to be suitable. This implies that TaCo2Te2 has potential application in field effect transistors. Bachelor's degree 2024-05-20T07:51:05Z 2024-05-20T07:51:05Z 2024 Final Year Project (FYP) Loo, G. S. W. (2024). Quantum engineering of 2D magnetic structure. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/176847 https://hdl.handle.net/10356/176847 en application/pdf Nanyang Technological University
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering
spellingShingle Engineering
Loo, Gordon San Wei
Quantum engineering of 2D magnetic structure
description This report looks to examine two-dimensional (2D) materials and their possible viability as a material in field effect transistors (FETs) over conventional counterparts. In this report, TaCo2Te2 was extracted in thin film flakes and attached to a Hall Device to measure its magnetoresistance and Hall effect. After fabrication of the TaCo2Te2 Hall Device, the material’s magnetoresistance was found to be suitable. This implies that TaCo2Te2 has potential application in field effect transistors.
author2 Song Peng
author_facet Song Peng
Loo, Gordon San Wei
format Final Year Project
author Loo, Gordon San Wei
author_sort Loo, Gordon San Wei
title Quantum engineering of 2D magnetic structure
title_short Quantum engineering of 2D magnetic structure
title_full Quantum engineering of 2D magnetic structure
title_fullStr Quantum engineering of 2D magnetic structure
title_full_unstemmed Quantum engineering of 2D magnetic structure
title_sort quantum engineering of 2d magnetic structure
publisher Nanyang Technological University
publishDate 2024
url https://hdl.handle.net/10356/176847
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