A radiation-hardened-by-design RISC-V microcontroller

Digital electronics in space and high-level autonomous vehicles are required to feature an ultra-low soft error rate (SER ≤ 10FITS) – an SER unattainable by consumer-grade digital electronics. This project is part of a joint project between NTU, Zero-Error Systems Pte Ltd (ZES) and the Institute of...

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Main Author: Fang, Rouli
Other Authors: Chang Joseph
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2024
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Online Access:https://hdl.handle.net/10356/177249
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-1772492024-05-31T15:44:06Z A radiation-hardened-by-design RISC-V microcontroller Fang, Rouli Chang Joseph School of Electrical and Electronic Engineering Zero-Error Systems Pte Ltd A*STAR Institute of Microelectronics Centre for Integrated Circuits and Systems EJSCHANG@ntu.edu.sg Engineering Microcontroller RSIC-V Digital IC Testing RHBD Digital electronics in space and high-level autonomous vehicles are required to feature an ultra-low soft error rate (SER ≤ 10FITS) – an SER unattainable by consumer-grade digital electronics. This project is part of a joint project between NTU, Zero-Error Systems Pte Ltd (ZES) and the Institute of Microelectronics (IME), A*STAR to design an ultra-low-SER RISC-V microprocessor. The approach is based on the Radiation-Hardened-By-Design (RHBD) techniques, involving a new RHBD cell library. The RHBD cell library requires verification of its cells in terms of SER under irradiation. For verification, test structures need to be designed to detect the soft errors, thereby ascertaining the radiation hardness of the cells. However, when characterizing a large quantity of cells, reported test structures induce an exorbitant cost, owing to either the large test die area overhead or the unacceptably long test hours. This research-based Final Year Project (FYP) pertains to the said test structures, with the objectives of addressing the aforesaid challenges. Specifically, this FYP proposes a novel test structure design involving our proposed Multi-Error-Lock-Trace (MELT) mechanism. This proposed mechanism serves to temporarily lock the soft error into registers, and thereafter trace back to the location of the error occurrence. We implement four test structures based on our aforementioned proposed MELT strategy. The proposed methodology is very worthwhile. Specifically, when compared to the reported approach of assigning individual I/O pads for each device-under-test (DUT), our method reduces the number of I/O pads by 89%, translating to >95% die area reduction. Further, when compared to the other reported approach of multiplexing I/O pads for each DUT, our method reduces the number of test hours by >80%. In this FYP, we further realized the proposed microprocessor in an FPGA to verify its software design and to benchmark its core performance. This FYP has met all stipulated objectives and the outcomes, including a paper to be presented at the IEEE Custom IC Conference 2024, a paper to be presented at the IEEE Midwest Symposium on CAS 2024, and an impending technical disclosure of a patent. Bachelor's degree 2024-05-27T11:30:59Z 2024-05-27T11:30:59Z 2024 Final Year Project (FYP) Fang, R. (2024). A radiation-hardened-by-design RISC-V microcontroller. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/177249 https://hdl.handle.net/10356/177249 en B2056-231 application/pdf Nanyang Technological University
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering
Microcontroller
RSIC-V
Digital IC
Testing
RHBD
spellingShingle Engineering
Microcontroller
RSIC-V
Digital IC
Testing
RHBD
Fang, Rouli
A radiation-hardened-by-design RISC-V microcontroller
description Digital electronics in space and high-level autonomous vehicles are required to feature an ultra-low soft error rate (SER ≤ 10FITS) – an SER unattainable by consumer-grade digital electronics. This project is part of a joint project between NTU, Zero-Error Systems Pte Ltd (ZES) and the Institute of Microelectronics (IME), A*STAR to design an ultra-low-SER RISC-V microprocessor. The approach is based on the Radiation-Hardened-By-Design (RHBD) techniques, involving a new RHBD cell library. The RHBD cell library requires verification of its cells in terms of SER under irradiation. For verification, test structures need to be designed to detect the soft errors, thereby ascertaining the radiation hardness of the cells. However, when characterizing a large quantity of cells, reported test structures induce an exorbitant cost, owing to either the large test die area overhead or the unacceptably long test hours. This research-based Final Year Project (FYP) pertains to the said test structures, with the objectives of addressing the aforesaid challenges. Specifically, this FYP proposes a novel test structure design involving our proposed Multi-Error-Lock-Trace (MELT) mechanism. This proposed mechanism serves to temporarily lock the soft error into registers, and thereafter trace back to the location of the error occurrence. We implement four test structures based on our aforementioned proposed MELT strategy. The proposed methodology is very worthwhile. Specifically, when compared to the reported approach of assigning individual I/O pads for each device-under-test (DUT), our method reduces the number of I/O pads by 89%, translating to >95% die area reduction. Further, when compared to the other reported approach of multiplexing I/O pads for each DUT, our method reduces the number of test hours by >80%. In this FYP, we further realized the proposed microprocessor in an FPGA to verify its software design and to benchmark its core performance. This FYP has met all stipulated objectives and the outcomes, including a paper to be presented at the IEEE Custom IC Conference 2024, a paper to be presented at the IEEE Midwest Symposium on CAS 2024, and an impending technical disclosure of a patent.
author2 Chang Joseph
author_facet Chang Joseph
Fang, Rouli
format Final Year Project
author Fang, Rouli
author_sort Fang, Rouli
title A radiation-hardened-by-design RISC-V microcontroller
title_short A radiation-hardened-by-design RISC-V microcontroller
title_full A radiation-hardened-by-design RISC-V microcontroller
title_fullStr A radiation-hardened-by-design RISC-V microcontroller
title_full_unstemmed A radiation-hardened-by-design RISC-V microcontroller
title_sort radiation-hardened-by-design risc-v microcontroller
publisher Nanyang Technological University
publishDate 2024
url https://hdl.handle.net/10356/177249
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