Programmable ferroelectricity in Hf0.5Zr0.5O2 enabled by oxygen defect engineering

• Main Authors: Shao, Minghao, Liu, Houfang, He, Ri, Li, Xiaomei, Wu, Liang, Ma, Ji, Ye, Chen, Hu, Xiangchen, Zhao, Ruiting, Zhong, Zhicheng, Yu, Yi, Wan, Caihua, Yang, Yi, Nan, Ce-Wen, Bai, Xuedong, Ren, Tian-Ling, Wang, Renshaw Xiao
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2024
• Subjects: Engineering; Ferroelectric HZO; Oxygen defect
• Online Access: https://hdl.handle.net/10356/178205
• Institution: Nanyang Technological University

Ferroelectricity, especially the Si-compatible type recently observed in hafnia-based materials, is technologically useful for modern memory and logic applications, but it is challenging to differentiate intrinsic ferroelectric polarization from the polar phase and oxygen vacancy. Here, we report el...