Programmable ferroelectricity in Hf0.5Zr0.5O2 enabled by oxygen defect engineering

• المؤلفون الرئيسيون: Shao, Minghao, Liu, Houfang, He, Ri, Li, Xiaomei, Wu, Liang, Ma, Ji, Ye, Chen, Hu, Xiangchen, Zhao, Ruiting, Zhong, Zhicheng, Yu, Yi, Wan, Caihua, Yang, Yi, Nan, Ce-Wen, Bai, Xuedong, Ren, Tian-Ling, Wang, Renshaw Xiao
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2024
• الموضوعات: Engineering; Ferroelectric HZO; Oxygen defect
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/178205

Ferroelectricity, especially the Si-compatible type recently observed in hafnia-based materials, is technologically useful for modern memory and logic applications, but it is challenging to differentiate intrinsic ferroelectric polarization from the polar phase and oxygen vacancy. Here, we report el...