Programmable ferroelectricity in Hf0.5Zr0.5O2 enabled by oxygen defect engineering

• Main Authors: Shao, Minghao, Liu, Houfang, He, Ri, Li, Xiaomei, Wu, Liang, Ma, Ji, Ye, Chen, Hu, Xiangchen, Zhao, Ruiting, Zhong, Zhicheng, Yu, Yi, Wan, Caihua, Yang, Yi, Nan, Ce-Wen, Bai, Xuedong, Ren, Tian-Ling, Wang, Renshaw Xiao
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2024
• 主題: Engineering; Ferroelectric HZO; Oxygen defect
• 在線閱讀: https://hdl.handle.net/10356/178205

Ferroelectricity, especially the Si-compatible type recently observed in hafnia-based materials, is technologically useful for modern memory and logic applications, but it is challenging to differentiate intrinsic ferroelectric polarization from the polar phase and oxygen vacancy. Here, we report el...