Schottky diodes using GaN-based semiconductors : application to next generation mobile communications

The continuous progress of microelectronic technologies together with developments in III-V technology has sustained the semiconductors growth for many years. Therefore, Schottky diodes using GaN-based semiconductors are of great interest of the application to next generation mobile communication...

Full description

Saved in:
Bibliographic Details
Main Author: Leow, Kee Sing.
Other Authors: K Radhakrishnan
Format: Final Year Project
Language:English
Published: 2009
Subjects:
Online Access:http://hdl.handle.net/10356/17872
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-17872
record_format dspace
spelling sg-ntu-dr.10356-178722023-07-07T16:36:43Z Schottky diodes using GaN-based semiconductors : application to next generation mobile communications Leow, Kee Sing. K Radhakrishnan School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors The continuous progress of microelectronic technologies together with developments in III-V technology has sustained the semiconductors growth for many years. Therefore, Schottky diodes using GaN-based semiconductors are of great interest of the application to next generation mobile communications. In this application, GaN technology serves to increase the power and frequency of the transistors. A brief introduction of the operation of Schottky diode and III-V nitride are presented. Fabrication procedures of the GaN diodes on silicon and sapphire substrates are also illustrated in this report. Thus, this report shall investigate on the growth of GaN on sapphire and silicon substrates as well as deposition of various metals such as Titanium (Ti), Nickel (Ni), Aluminum (Al) and Gold (Au) in order to achieve high power and high frequency devices using Electron-Beam Evaporation techniques respectively. Molecular Beam Epitaxy (MBE) method is used to grow GaN on the substrate. After fabrication of devices, methods to characterize the devices are carried out. Two methods were used to characterize the devices which are Current-Voltage (I-V) and Capacitance-Voltage (C-V) techniques. Results are analyzed for the ideality factor and barrier height of the devices. Therefore, I-V characteristics of the devices as a function of diode and temperature are presented. Barrier height and ideality factor as a function of temperature as well as a function of thermal annealing of devices will be discussed in this report. Bachelor of Engineering 2009-06-17T05:20:53Z 2009-06-17T05:20:53Z 2009 2009 Final Year Project (FYP) http://hdl.handle.net/10356/17872 en Nanyang Technological University 102 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Leow, Kee Sing.
Schottky diodes using GaN-based semiconductors : application to next generation mobile communications
description The continuous progress of microelectronic technologies together with developments in III-V technology has sustained the semiconductors growth for many years. Therefore, Schottky diodes using GaN-based semiconductors are of great interest of the application to next generation mobile communications. In this application, GaN technology serves to increase the power and frequency of the transistors. A brief introduction of the operation of Schottky diode and III-V nitride are presented. Fabrication procedures of the GaN diodes on silicon and sapphire substrates are also illustrated in this report. Thus, this report shall investigate on the growth of GaN on sapphire and silicon substrates as well as deposition of various metals such as Titanium (Ti), Nickel (Ni), Aluminum (Al) and Gold (Au) in order to achieve high power and high frequency devices using Electron-Beam Evaporation techniques respectively. Molecular Beam Epitaxy (MBE) method is used to grow GaN on the substrate. After fabrication of devices, methods to characterize the devices are carried out. Two methods were used to characterize the devices which are Current-Voltage (I-V) and Capacitance-Voltage (C-V) techniques. Results are analyzed for the ideality factor and barrier height of the devices. Therefore, I-V characteristics of the devices as a function of diode and temperature are presented. Barrier height and ideality factor as a function of temperature as well as a function of thermal annealing of devices will be discussed in this report.
author2 K Radhakrishnan
author_facet K Radhakrishnan
Leow, Kee Sing.
format Final Year Project
author Leow, Kee Sing.
author_sort Leow, Kee Sing.
title Schottky diodes using GaN-based semiconductors : application to next generation mobile communications
title_short Schottky diodes using GaN-based semiconductors : application to next generation mobile communications
title_full Schottky diodes using GaN-based semiconductors : application to next generation mobile communications
title_fullStr Schottky diodes using GaN-based semiconductors : application to next generation mobile communications
title_full_unstemmed Schottky diodes using GaN-based semiconductors : application to next generation mobile communications
title_sort schottky diodes using gan-based semiconductors : application to next generation mobile communications
publishDate 2009
url http://hdl.handle.net/10356/17872
_version_ 1772827965278650368