Schottky diodes using GaN-based semiconductors : application to next generation mobile communications
The continuous progress of microelectronic technologies together with developments in III-V technology has sustained the semiconductors growth for many years. Therefore, Schottky diodes using GaN-based semiconductors are of great interest of the application to next generation mobile communication...
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sg-ntu-dr.10356-178722023-07-07T16:36:43Z Schottky diodes using GaN-based semiconductors : application to next generation mobile communications Leow, Kee Sing. K Radhakrishnan School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors The continuous progress of microelectronic technologies together with developments in III-V technology has sustained the semiconductors growth for many years. Therefore, Schottky diodes using GaN-based semiconductors are of great interest of the application to next generation mobile communications. In this application, GaN technology serves to increase the power and frequency of the transistors. A brief introduction of the operation of Schottky diode and III-V nitride are presented. Fabrication procedures of the GaN diodes on silicon and sapphire substrates are also illustrated in this report. Thus, this report shall investigate on the growth of GaN on sapphire and silicon substrates as well as deposition of various metals such as Titanium (Ti), Nickel (Ni), Aluminum (Al) and Gold (Au) in order to achieve high power and high frequency devices using Electron-Beam Evaporation techniques respectively. Molecular Beam Epitaxy (MBE) method is used to grow GaN on the substrate. After fabrication of devices, methods to characterize the devices are carried out. Two methods were used to characterize the devices which are Current-Voltage (I-V) and Capacitance-Voltage (C-V) techniques. Results are analyzed for the ideality factor and barrier height of the devices. Therefore, I-V characteristics of the devices as a function of diode and temperature are presented. Barrier height and ideality factor as a function of temperature as well as a function of thermal annealing of devices will be discussed in this report. Bachelor of Engineering 2009-06-17T05:20:53Z 2009-06-17T05:20:53Z 2009 2009 Final Year Project (FYP) http://hdl.handle.net/10356/17872 en Nanyang Technological University 102 p. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Leow, Kee Sing. Schottky diodes using GaN-based semiconductors : application to next generation mobile communications |
description |
The continuous progress of microelectronic technologies together with developments in
III-V technology has sustained the semiconductors growth for many years. Therefore,
Schottky diodes using GaN-based semiconductors are of great interest of the application
to next generation mobile communications. In this application, GaN technology serves
to increase the power and frequency of the transistors.
A brief introduction of the operation of Schottky diode and III-V nitride are presented.
Fabrication procedures of the GaN diodes on silicon and sapphire substrates are also
illustrated in this report. Thus, this report shall investigate on the growth of GaN on
sapphire and silicon substrates as well as deposition of various metals such as Titanium
(Ti), Nickel (Ni), Aluminum (Al) and Gold (Au) in order to achieve high power and
high frequency devices using Electron-Beam Evaporation techniques respectively.
Molecular Beam Epitaxy (MBE) method is used to grow GaN on the substrate.
After fabrication of devices, methods to characterize the devices are carried out. Two
methods were used to characterize the devices which are Current-Voltage (I-V) and
Capacitance-Voltage (C-V) techniques. Results are analyzed for the ideality factor and
barrier height of the devices. Therefore, I-V characteristics of the devices as a function
of diode and temperature are presented. Barrier height and ideality factor as a function of
temperature as well as a function of thermal annealing of devices will be discussed in
this report. |
author2 |
K Radhakrishnan |
author_facet |
K Radhakrishnan Leow, Kee Sing. |
format |
Final Year Project |
author |
Leow, Kee Sing. |
author_sort |
Leow, Kee Sing. |
title |
Schottky diodes using GaN-based semiconductors : application to next generation mobile communications |
title_short |
Schottky diodes using GaN-based semiconductors : application to next generation mobile communications |
title_full |
Schottky diodes using GaN-based semiconductors : application to next generation mobile communications |
title_fullStr |
Schottky diodes using GaN-based semiconductors : application to next generation mobile communications |
title_full_unstemmed |
Schottky diodes using GaN-based semiconductors : application to next generation mobile communications |
title_sort |
schottky diodes using gan-based semiconductors : application to next generation mobile communications |
publishDate |
2009 |
url |
http://hdl.handle.net/10356/17872 |
_version_ |
1772827965278650368 |