Device simulation study of lateral Schottky collector phototransistor (SCPT)

• Main Author: Xiao, Yang
• Other Authors: Yu Hongyu
• Format: Final Year Project
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: http://hdl.handle.net/10356/18008
• Institution: Nanyang Technological University

This report documents the device simulation study of lateral Schottky Collector Phototransistor (SCPT). In silicon-on-insulator (SOI) waveguide-based photodetector, Schottky-barrier Photodiode (SPD) owns some advantages over the Ge-photodetector, such as longer cut-off wavelength, ease fabrication...