Device simulation study of lateral Schottky collector phototransistor (SCPT)

This report documents the device simulation study of lateral Schottky Collector Phototransistor (SCPT). In silicon-on-insulator (SOI) waveguide-based photodetector, Schottky-barrier Photodiode (SPD) owns some advantages over the Ge-photodetector, such as longer cut-off wavelength, ease fabrication...

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Main Author: Xiao, Yang
Other Authors: Yu Hongyu
Format: Final Year Project
Language:English
Published: 2009
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Online Access:http://hdl.handle.net/10356/18008
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-180082019-12-10T14:41:31Z Device simulation study of lateral Schottky collector phototransistor (SCPT) Xiao, Yang Yu Hongyu School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors This report documents the device simulation study of lateral Schottky Collector Phototransistor (SCPT). In silicon-on-insulator (SOI) waveguide-based photodetector, Schottky-barrier Photodiode (SPD) owns some advantages over the Ge-photodetector, such as longer cut-off wavelength, ease fabrication, low cost, and smaller size etc. However, it suffers low responsivity due to low quantum efficiency. The novel lateral SCPT proposed by IME improved the responsivity by amplifying the primary photocurrent through transistor action. The proposed lateral SCPT differs from the NPN phototransistor in that the collector-base junction consists of a Schottky junction between the metal (M) and/ p-base (P). The characteristics of the lateral SCPT were explored using two-dimensional simulation with Medici. Due to relatively long base width (2.4μm), the proposed SCPT only achieves a current gain of 9.9. By simulating the forward current characteristics for different combinations of base width and emitter doping, the current gain can be improved to 49.7 for a narrower base width (0.8μm). Bachelor of Engineering 2009-06-18T08:19:28Z 2009-06-18T08:19:28Z 2009 2009 Final Year Project (FYP) http://hdl.handle.net/10356/18008 en Nanyang Technological University 58 p. application/msword
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Xiao, Yang
Device simulation study of lateral Schottky collector phototransistor (SCPT)
description This report documents the device simulation study of lateral Schottky Collector Phototransistor (SCPT). In silicon-on-insulator (SOI) waveguide-based photodetector, Schottky-barrier Photodiode (SPD) owns some advantages over the Ge-photodetector, such as longer cut-off wavelength, ease fabrication, low cost, and smaller size etc. However, it suffers low responsivity due to low quantum efficiency. The novel lateral SCPT proposed by IME improved the responsivity by amplifying the primary photocurrent through transistor action. The proposed lateral SCPT differs from the NPN phototransistor in that the collector-base junction consists of a Schottky junction between the metal (M) and/ p-base (P). The characteristics of the lateral SCPT were explored using two-dimensional simulation with Medici. Due to relatively long base width (2.4μm), the proposed SCPT only achieves a current gain of 9.9. By simulating the forward current characteristics for different combinations of base width and emitter doping, the current gain can be improved to 49.7 for a narrower base width (0.8μm).
author2 Yu Hongyu
author_facet Yu Hongyu
Xiao, Yang
format Final Year Project
author Xiao, Yang
author_sort Xiao, Yang
title Device simulation study of lateral Schottky collector phototransistor (SCPT)
title_short Device simulation study of lateral Schottky collector phototransistor (SCPT)
title_full Device simulation study of lateral Schottky collector phototransistor (SCPT)
title_fullStr Device simulation study of lateral Schottky collector phototransistor (SCPT)
title_full_unstemmed Device simulation study of lateral Schottky collector phototransistor (SCPT)
title_sort device simulation study of lateral schottky collector phototransistor (scpt)
publishDate 2009
url http://hdl.handle.net/10356/18008
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