Device simulation study of lateral Schottky collector phototransistor (SCPT)
This report documents the device simulation study of lateral Schottky Collector Phototransistor (SCPT). In silicon-on-insulator (SOI) waveguide-based photodetector, Schottky-barrier Photodiode (SPD) owns some advantages over the Ge-photodetector, such as longer cut-off wavelength, ease fabrication...
Saved in:
Main Author: | |
---|---|
Other Authors: | |
Format: | Final Year Project |
Language: | English |
Published: |
2009
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/18008 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
id |
sg-ntu-dr.10356-18008 |
---|---|
record_format |
dspace |
spelling |
sg-ntu-dr.10356-180082019-12-10T14:41:31Z Device simulation study of lateral Schottky collector phototransistor (SCPT) Xiao, Yang Yu Hongyu School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors This report documents the device simulation study of lateral Schottky Collector Phototransistor (SCPT). In silicon-on-insulator (SOI) waveguide-based photodetector, Schottky-barrier Photodiode (SPD) owns some advantages over the Ge-photodetector, such as longer cut-off wavelength, ease fabrication, low cost, and smaller size etc. However, it suffers low responsivity due to low quantum efficiency. The novel lateral SCPT proposed by IME improved the responsivity by amplifying the primary photocurrent through transistor action. The proposed lateral SCPT differs from the NPN phototransistor in that the collector-base junction consists of a Schottky junction between the metal (M) and/ p-base (P). The characteristics of the lateral SCPT were explored using two-dimensional simulation with Medici. Due to relatively long base width (2.4μm), the proposed SCPT only achieves a current gain of 9.9. By simulating the forward current characteristics for different combinations of base width and emitter doping, the current gain can be improved to 49.7 for a narrower base width (0.8μm). Bachelor of Engineering 2009-06-18T08:19:28Z 2009-06-18T08:19:28Z 2009 2009 Final Year Project (FYP) http://hdl.handle.net/10356/18008 en Nanyang Technological University 58 p. application/msword |
institution |
Nanyang Technological University |
building |
NTU Library |
country |
Singapore |
collection |
DR-NTU |
language |
English |
topic |
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors |
spellingShingle |
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Xiao, Yang Device simulation study of lateral Schottky collector phototransistor (SCPT) |
description |
This report documents the device simulation study of lateral Schottky Collector Phototransistor (SCPT). In silicon-on-insulator (SOI) waveguide-based photodetector, Schottky-barrier Photodiode (SPD) owns some advantages over the Ge-photodetector, such as longer cut-off wavelength, ease fabrication, low cost, and smaller size etc. However, it suffers low responsivity due to low quantum efficiency. The novel lateral SCPT proposed by IME improved the responsivity by amplifying the primary photocurrent through transistor action.
The proposed lateral SCPT differs from the NPN phototransistor in that the collector-base junction consists of a Schottky junction between the metal (M) and/ p-base (P). The characteristics of the lateral SCPT were explored using two-dimensional simulation with Medici. Due to relatively long base width (2.4μm), the proposed SCPT only achieves a current gain of 9.9. By simulating the forward current characteristics for different combinations of base width and emitter doping, the current gain can be improved to 49.7 for a narrower base width (0.8μm). |
author2 |
Yu Hongyu |
author_facet |
Yu Hongyu Xiao, Yang |
format |
Final Year Project |
author |
Xiao, Yang |
author_sort |
Xiao, Yang |
title |
Device simulation study of lateral Schottky collector phototransistor (SCPT) |
title_short |
Device simulation study of lateral Schottky collector phototransistor (SCPT) |
title_full |
Device simulation study of lateral Schottky collector phototransistor (SCPT) |
title_fullStr |
Device simulation study of lateral Schottky collector phototransistor (SCPT) |
title_full_unstemmed |
Device simulation study of lateral Schottky collector phototransistor (SCPT) |
title_sort |
device simulation study of lateral schottky collector phototransistor (scpt) |
publishDate |
2009 |
url |
http://hdl.handle.net/10356/18008 |
_version_ |
1681048663757946880 |