Precise modeling of silicon carbide-based power switches
The Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC MOSFET) is a new wide-bandgap semiconductor device that has high working temperature, high breakdown voltage capabilities, and low on-resistance. This paper presents an in-depth study of SiC MOSFETs and provides a detailed ev...
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| 格式: | Thesis-Master by Coursework |
| 語言: | English |
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Nanyang Technological University
2024
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/181394 |
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| 機構: | Nanyang Technological University |
| 語言: | English |