Precise modeling of silicon carbide-based power switches

• المؤلف الرئيسي: Tang, Boxuan
• مؤلفون آخرون: Yun Yang
• التنسيق: Thesis-Master by Coursework
• اللغة: English
• منشور في: Nanyang Technological University 2024
• الموضوعات: Engineering; SiC MOSFET; Switching characteristics; Dual-pulse simulation test; Parasitic inductance; Crosstalk
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/181394

The Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC MOSFET) is a new wide-bandgap semiconductor device that has high working temperature, high breakdown voltage capabilities, and low on-resistance. This paper presents an in-depth study of SiC MOSFETs and provides a detailed ev...