Carbon nanotube based ferroelectric gated transistors for artificial synaptic devices

The advancement of neuromorphic computing necessitates the development of synaptic devices that can mimic the functionalities of biological synapses with high efficiency and low power consumption. This dissertation presents a comprehensive study on the development of carbon nanotube (CNT)-base...

Full description

Saved in:
Bibliographic Details
Main Author: Shang, Yihan
Other Authors: Tay Beng Kang
Format: Thesis-Master by Coursework
Language:English
Published: Nanyang Technological University 2024
Subjects:
Online Access:https://hdl.handle.net/10356/181419
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-181419
record_format dspace
spelling sg-ntu-dr.10356-1814192024-12-06T15:49:22Z Carbon nanotube based ferroelectric gated transistors for artificial synaptic devices Shang, Yihan Tay Beng Kang School of Electrical and Electronic Engineering CINTRA EBKTAY@ntu.edu.sg Engineering The advancement of neuromorphic computing necessitates the development of synaptic devices that can mimic the functionalities of biological synapses with high efficiency and low power consumption. This dissertation presents a comprehensive study on the development of carbon nanotube (CNT)-based ferroelectric gated synaptic transistor. It integrates high-mobility CNTs with high-quality ferroelectric gate oxide (HfZrO2) to achieve synaptic functions. The study aims to optimize deposition techniques for CNT films and HfZrO2 thin films, ensuring uniformity and high-quality interfaces that are critical for effective gate control. Detailed experimental analyses demonstrate the CNT-based ferroelectric gated synaptic transistors can operate at low voltages with an on/off current ratio of approximately six orders of magnitude and a subthreshold swing of around 80 mV/dec. The synaptic functionalities, characterized through excitatory post-synaptic current (EPSC) measurements, exhibit clear stepwise current increases, highlighting the device's capability to replicate synaptic plasticity. These findings indicate that the proposed CNT based ferroelectric gated synaptic transistors offer substantial potential for integration into neuromorphic systems, providing insights into future optimization strategies and broader applications in artificial intelligence. Master's degree 2024-12-02T03:16:08Z 2024-12-02T03:16:08Z 2024 Thesis-Master by Coursework Shang, Y. (2024). Carbon nanotube based ferroelectric gated transistors for artificial synaptic devices. Master's thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/181419 https://hdl.handle.net/10356/181419 en ISM-DISS-04191 application/pdf Nanyang Technological University
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering
spellingShingle Engineering
Shang, Yihan
Carbon nanotube based ferroelectric gated transistors for artificial synaptic devices
description The advancement of neuromorphic computing necessitates the development of synaptic devices that can mimic the functionalities of biological synapses with high efficiency and low power consumption. This dissertation presents a comprehensive study on the development of carbon nanotube (CNT)-based ferroelectric gated synaptic transistor. It integrates high-mobility CNTs with high-quality ferroelectric gate oxide (HfZrO2) to achieve synaptic functions. The study aims to optimize deposition techniques for CNT films and HfZrO2 thin films, ensuring uniformity and high-quality interfaces that are critical for effective gate control. Detailed experimental analyses demonstrate the CNT-based ferroelectric gated synaptic transistors can operate at low voltages with an on/off current ratio of approximately six orders of magnitude and a subthreshold swing of around 80 mV/dec. The synaptic functionalities, characterized through excitatory post-synaptic current (EPSC) measurements, exhibit clear stepwise current increases, highlighting the device's capability to replicate synaptic plasticity. These findings indicate that the proposed CNT based ferroelectric gated synaptic transistors offer substantial potential for integration into neuromorphic systems, providing insights into future optimization strategies and broader applications in artificial intelligence.
author2 Tay Beng Kang
author_facet Tay Beng Kang
Shang, Yihan
format Thesis-Master by Coursework
author Shang, Yihan
author_sort Shang, Yihan
title Carbon nanotube based ferroelectric gated transistors for artificial synaptic devices
title_short Carbon nanotube based ferroelectric gated transistors for artificial synaptic devices
title_full Carbon nanotube based ferroelectric gated transistors for artificial synaptic devices
title_fullStr Carbon nanotube based ferroelectric gated transistors for artificial synaptic devices
title_full_unstemmed Carbon nanotube based ferroelectric gated transistors for artificial synaptic devices
title_sort carbon nanotube based ferroelectric gated transistors for artificial synaptic devices
publisher Nanyang Technological University
publishDate 2024
url https://hdl.handle.net/10356/181419
_version_ 1819113001582592000