Passivation of GaAs for efficient solar cells
Due to the need for a more efficient and simpler to manufacture solar cell, this project aims to produce design, fabricate and test a tandem passivation layer in the form of Al2O3 and IGZO to increase the efficiency of an n-GaAs solar cell. The fabrication is designed to utilise RF Magnetron deposit...
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| Format: | Final Year Project |
| Language: | English |
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Nanyang Technological University
2024
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| Online Access: | https://hdl.handle.net/10356/181747 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Due to the need for a more efficient and simpler to manufacture solar cell, this project aims to produce design, fabricate and test a tandem passivation layer in the form of Al2O3 and IGZO to increase the efficiency of an n-GaAs solar cell. The fabrication is designed to utilise RF Magnetron deposition, Atomic Layer Deposition, Reactive Ion Etching, and Rapid Thermal Annealing. To test the performance, Scanning Electron Microscopy, Atomic Force Microscopy, Quasi Steady-State Photoconductance, and I-V Characteristics curve were considered. |
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