Passivation of GaAs for efficient solar cells

Passivation of GaAs for efficient solar cells

Due to the need for a more efficient and simpler to manufacture solar cell, this project aims to produce design, fabricate and test a tandem passivation layer in the form of Al2O3 and IGZO to increase the efficiency of an n-GaAs solar cell. The fabrication is designed to utilise RF Magnetron deposit...

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Main Author: Teo, Wei Siang
Other Authors: Kim Munho
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2024
Subjects:
Engineering
Online Access:https://hdl.handle.net/10356/181747
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1817472024-12-20T15:46:03Z Passivation of GaAs for efficient solar cells Teo, Wei Siang Kim Munho School of Electrical and Electronic Engineering munho.kim@ntu.edu.sg Engineering Due to the need for a more efficient and simpler to manufacture solar cell, this project aims to produce design, fabricate and test a tandem passivation layer in the form of Al2O3 and IGZO to increase the efficiency of an n-GaAs solar cell. The fabrication is designed to utilise RF Magnetron deposition, Atomic Layer Deposition, Reactive Ion Etching, and Rapid Thermal Annealing. To test the performance, Scanning Electron Microscopy, Atomic Force Microscopy, Quasi Steady-State Photoconductance, and I-V Characteristics curve were considered. Bachelor's degree 2024-12-17T11:59:21Z 2024-12-17T11:59:21Z 2024 Final Year Project (FYP) Teo, W. S. (2024). Passivation of GaAs for efficient solar cells. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/181747 https://hdl.handle.net/10356/181747 en application/pdf Nanyang Technological University
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering
spellingShingle Engineering
Teo, Wei Siang
Passivation of GaAs for efficient solar cells
description Due to the need for a more efficient and simpler to manufacture solar cell, this project aims to produce design, fabricate and test a tandem passivation layer in the form of Al2O3 and IGZO to increase the efficiency of an n-GaAs solar cell. The fabrication is designed to utilise RF Magnetron deposition, Atomic Layer Deposition, Reactive Ion Etching, and Rapid Thermal Annealing. To test the performance, Scanning Electron Microscopy, Atomic Force Microscopy, Quasi Steady-State Photoconductance, and I-V Characteristics curve were considered.
author2 Kim Munho
author_facet Kim Munho
Teo, Wei Siang
format Final Year Project
author Teo, Wei Siang
author_sort Teo, Wei Siang
title Passivation of GaAs for efficient solar cells
title_short Passivation of GaAs for efficient solar cells
title_full Passivation of GaAs for efficient solar cells
title_fullStr Passivation of GaAs for efficient solar cells
title_full_unstemmed Passivation of GaAs for efficient solar cells
title_sort passivation of gaas for efficient solar cells
publisher Nanyang Technological University
publishDate 2024
url https://hdl.handle.net/10356/181747
_version_ 1819113048854495232

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