GaN HEMTs device modeling in high-power and high-frequency applications
Wide Band Gap semiconductor devices are widely used in the high-power and high-frequency applications. Power GaN HEMTs attract the attentions of many power device and circuit designers to achieve better chip performance. However, the investigation and improvement of GaN HEMTs are time-consuming and...
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| 格式: | Thesis-Master by Coursework |
| 語言: | English |
| 出版: |
Nanyang Technological University
2025
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/182475 |
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| 機構: | Nanyang Technological University |
| 語言: | English |