Memory properties of carbon nanotube field effect transistor (CNTFET)

• Main Author: Toh, Teck Kiong.
• Other Authors: Zhang Qing
• Format: Final Year Project
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• Online Access: http://hdl.handle.net/10356/18329
• Institution: Nanyang Technological University

This report focuses on the fabrication and investigation of memory properties of carbon Nanotube field effect transistor (CNTFET). The literature review about Carbon Nanotube (CNTs) is given to introduce this new technology. Another three literature reviews about Memory are given to introduce the CNT memory technology. Its related concepts such as hysteresis, read/write operations and annealing effect are discussed. To know the procedures of using fabrication equipments such as E-Beam Physical Vapor Deposition (B-Beam PVD) and Plasma Enhanced Chemical Vapor Deposition (PECVD), and characterization equipments such as HP4156B Analyzer is crucial in order for the experiment to proceed on smoothly. The procedures are discussed with explanations. Fabrication of the memory devices is an important part of the project. Two batches of memory devices are fabricated, with different tunnelling dielectric layer. The mechanism in fabricating the memory devices has been studied in detail to understand the building structure of memory devices better. Characterization test of memory devices is another major part in this report. Characterization has been done on the memory devices. Results of transfer characteristics curves and memory charging/discharging effects are investigated and discussed in detail to understand the capabilities and potential of CNT memory devices.