Development of process technology for fabrication of 4H-SiC silicon carbide schottky barrier diodes
In recent times, 4H-SiC has been at the center of power semiconductor device research due to its superior material properties such as large bandgap (Eg ~3.26 eV), high breakdown electric field (Ec ~3 MV/cm which is almost 10 times that of Si), high saturated electron velocity (~2.0×107 cm/s which is...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2009
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| Online Access: | https://hdl.handle.net/10356/19273 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | In recent times, 4H-SiC has been at the center of power semiconductor device research due to its superior material properties such as large bandgap (Eg ~3.26 eV), high breakdown electric field (Ec ~3 MV/cm which is almost 10 times that of Si), high saturated electron velocity (~2.0×107 cm/s which is almost 2 times that in Si), high thermal conductivity (K ~4.9 W/cm.K) and most importantly ability to form a stable native oxide SiO2. Schottky barrier diodes (SBDs) based on 4H-SiC offer superior dynamic performance (<20 nC reverse recovery charge for a 1200 V, 1A SBD), almost 100 times lower specific-on resistance compared to Si SBDs and PiN diodes. The higher bandgap results in much higher schottky barrier height compared to Si and GaAs resulting in extremely low leakage currents even at elevated temperatures (>300oC operation). |
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