Development of process technology for fabrication of 4H-SiC silicon carbide schottky barrier diodes
In recent times, 4H-SiC has been at the center of power semiconductor device research due to its superior material properties such as large bandgap (Eg ~3.26 eV), high breakdown electric field (Ec ~3 MV/cm which is almost 10 times that of Si), high saturated electron velocity (~2.0×107 cm/s which is...
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| 格式: | Theses and Dissertations |
| 語言: | English |
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2009
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| 在線閱讀: | https://hdl.handle.net/10356/19273 |
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