Fabrication and characterization of AlGaAs/InGaAs-based pseudomorphic high electron mobility transistors (pHEMTs)

This work demonstrates the fabrication and operation of several types of pseudomorphic high electron mobility transistors (pHEMTs) and heterostructure field effect transistors (HFETs), which were our initial effort in gallium arsenide (GaAs) device fabrication. The aim of this work is to develop a r...

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書目詳細資料
主要作者: Lee, Hou Jang.
其他作者: Tse, Man Siu
格式: Theses and Dissertations
語言:English
出版: 2009
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在線閱讀:http://hdl.handle.net/10356/19634
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機構: Nanyang Technological University
語言: English