Diamond film growth by microwave plasma enhanced chemical vapour deposition

Diamond particles and continuous films have been successfully grown by Microwave Plasma Enhanced Chemical Vapour Deposition (MPECVD). The particles and films were characterised using scanning electron microscopy (SEM), atomic force microscopy (AFM) and Raman spectroscopy. Current-Voltage measurement...

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Main Author: Tan, Fong Hock.
Other Authors: Jaeshin, Ahn
Format: Theses and Dissertations
Language:English
Published: 2009
Subjects:
Online Access:http://hdl.handle.net/10356/19689
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-196892023-07-04T15:30:38Z Diamond film growth by microwave plasma enhanced chemical vapour deposition Tan, Fong Hock. Jaeshin, Ahn School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Diamond particles and continuous films have been successfully grown by Microwave Plasma Enhanced Chemical Vapour Deposition (MPECVD). The particles and films were characterised using scanning electron microscopy (SEM), atomic force microscopy (AFM) and Raman spectroscopy. Current-Voltage measurement and secondary ions mass spectrometry were being used to verify the presence of boron in the boron-doped diamond film. Silicon (Si) is mainly used as a substrate for the experimental studies. Master of Engineering 2009-12-14T06:21:48Z 2009-12-14T06:21:48Z 1995 1995 Thesis http://hdl.handle.net/10356/19689 en NANYANG TECHNOLOGICAL UNIVERSITY 160 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Tan, Fong Hock.
Diamond film growth by microwave plasma enhanced chemical vapour deposition
description Diamond particles and continuous films have been successfully grown by Microwave Plasma Enhanced Chemical Vapour Deposition (MPECVD). The particles and films were characterised using scanning electron microscopy (SEM), atomic force microscopy (AFM) and Raman spectroscopy. Current-Voltage measurement and secondary ions mass spectrometry were being used to verify the presence of boron in the boron-doped diamond film. Silicon (Si) is mainly used as a substrate for the experimental studies.
author2 Jaeshin, Ahn
author_facet Jaeshin, Ahn
Tan, Fong Hock.
format Theses and Dissertations
author Tan, Fong Hock.
author_sort Tan, Fong Hock.
title Diamond film growth by microwave plasma enhanced chemical vapour deposition
title_short Diamond film growth by microwave plasma enhanced chemical vapour deposition
title_full Diamond film growth by microwave plasma enhanced chemical vapour deposition
title_fullStr Diamond film growth by microwave plasma enhanced chemical vapour deposition
title_full_unstemmed Diamond film growth by microwave plasma enhanced chemical vapour deposition
title_sort diamond film growth by microwave plasma enhanced chemical vapour deposition
publishDate 2009
url http://hdl.handle.net/10356/19689
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