New BiCMOS device structures and circuits for low-voltage low-power applications
This thesis presents an in depth analysis and the development of a new generation of BiCMOS circuits for present and future VLSI requirements. The work is motivated by the increasing demand in both the speed and low power consumption at low supply voltages. First, two novel inverting circuits and th...
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sg-ntu-dr.10356-197272023-07-04T15:22:46Z New BiCMOS device structures and circuits for low-voltage low-power applications Yeo, Kiat Seng Samir Rofail School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits This thesis presents an in depth analysis and the development of a new generation of BiCMOS circuits for present and future VLSI requirements. The work is motivated by the increasing demand in both the speed and low power consumption at low supply voltages. First, two novel inverting circuits and their logic gates are introduced. These circuits employ the BiMOS configuration and are designed for the 23.3V supply voltage regime. Doctor of Philosophy (EEE) 2009-12-14T06:31:44Z 2009-12-14T06:31:44Z 1996 1996 Thesis http://hdl.handle.net/10356/19727 en NANYANG TECHNOLOGICAL UNIVERSITY 235 p. application/pdf |
| institution |
Nanyang Technological University |
| building |
NTU Library |
| continent |
Asia |
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Singapore Singapore |
| content_provider |
NTU Library |
| collection |
DR-NTU |
| language |
English |
| topic |
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits |
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DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits Yeo, Kiat Seng New BiCMOS device structures and circuits for low-voltage low-power applications |
| description |
This thesis presents an in depth analysis and the development of a new generation of BiCMOS circuits for present and future VLSI requirements. The work is motivated by the increasing demand in both the speed and low power consumption at low supply voltages. First, two novel inverting circuits and their logic gates are introduced. These circuits employ the BiMOS configuration and are designed for the 23.3V supply voltage regime. |
| author2 |
Samir Rofail |
| author_facet |
Samir Rofail Yeo, Kiat Seng |
| format |
Theses and Dissertations |
| author |
Yeo, Kiat Seng |
| author_sort |
Yeo, Kiat Seng |
| title |
New BiCMOS device structures and circuits for low-voltage low-power applications |
| title_short |
New BiCMOS device structures and circuits for low-voltage low-power applications |
| title_full |
New BiCMOS device structures and circuits for low-voltage low-power applications |
| title_fullStr |
New BiCMOS device structures and circuits for low-voltage low-power applications |
| title_full_unstemmed |
New BiCMOS device structures and circuits for low-voltage low-power applications |
| title_sort |
new bicmos device structures and circuits for low-voltage low-power applications |
| publishDate |
2009 |
| url |
http://hdl.handle.net/10356/19727 |
| _version_ |
1772826320707780608 |